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SERIES
FEATURE
Built-in bias resistor (R1=10k) Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)@IC=10mA/IB=0.5mA Low on Resistance Ron=0.94(TYP.)@VI=7V
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
RTAN140T2 (PRELIMINARY) RTAN140M
2.1 0.2 0.8 0.2 0.425 1.25
Unitmm
0.425
0.25
0.4
APPLICATION
muting circuit , switching circuit
1.2 0.8
0.65

2.0 1.3
0.4
0.9
0.65
EQUIVALENT CIRCUIT
C (OUT)
0.7
R1 B (IN)
JEITA, JEDEC ISAHAYAT-USM TERMINAL CONNECTOR BASE EMITTER COLLECTOR RTAN140U
1.6 0.4 0.8 0.4
JEITASC-70 JEDEC TERMINAL CONNECTOR BASE EMITTER COLLECTOR RTAN140C
2.5 0.5 1.5 0.5
E
(GND)
0.3
00.1
0.15 00.1 0.16 0.4
0.5

2.9 1.90
1.6 1.0
0.7
0.55
0.15
1.1
JEITASC-75A JEDEC TERMINAL CONNECTOR BASE EMITTER COLLECTOR
00.1
JEITASC-59 JEDECSimilar to TO-236 TERMINAL CONNECTOR BASE EMITTER COLLECTOR
ISAHAYA ELECTRONICS CORPORATION
0.8
0.95
0.5
0.95
0.5
0.3
SERIES
MAXIMUM RATING
SYMBOL PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature RTAN140T2 RATING RTAN140U RTAN140M 40 40 20 400 150 +150 -55+150 200
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
RTAN140C
UNIT V V V mA mW
125 +125 -55+125
ELECTRICAL CHARACTERISTICS
SYMBOL B EB CE E RON PARAMETER C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Input resistance Gain band width product Output "ON" resistance
package mounted on 9mmx19mmx1mm glass-epoxy substrate.
TEST CONDITION I C=50AIE=0mA I E=50AIC=0mA I C=1mARBE= VCB=40VI E =0mA VEB=40VI C =0mA VCE=5VI C =10mA I C =10mAI B =0.5mA VCE=10VI E =-10mAf=100MHz VI=7VRL=1k
MIN 40 40 20
LIMIT TYP
MAX
UNIT V V V A A mV k MHz
820 7 10 10 35 0.94
0.5 0.5 2500 13
TYPICAL CHARACTERISTICS
INPUT ON VOLTAGE VS. COLLECTOR CURRENT 100 VCE=0.2V INPUT ON VOLTAGE VI(ON) (V) COLLECTOR CURRENT IC (uA)
1000 VCE=5V
COLLECTOR CURRENT VS. INPUT OFF VOLTAGE
10
Ta=-40 25 75
100
Ta=-40 25 75
1
0.1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA)
10 0 0.2 0.4 0.6 0.8 1 INPUT OFF VOLTAGE VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
10000 DC FORWARD CURRENT GAIN hFE
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
75
DC REVERSE CURRENT GAIN VS. COLLECTOR CURRENT 10000 DC REVERSE CURRENT GAIN hFER VCE=5V
75
VEC=5V
1000
25
1000
100
Ta=-40
100
25 Ta=-40
10
10
1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA)
1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA)
COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat) (mV) IC/IB=20 100
75
ON RESISTANCE VS. INPUT VOLTAGE 100 f=1kHz RL=1k ON RESISTANCE Ron()
Ta=-40
10
25 75
10
25
1
1
Ta=-40
0.1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA)
0.1 0.1 1 10 100 INPUT VOLTAGE VI(V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein.
Jun.2008

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